Журнал Российского общества по неразрушающему контролю и технической диагностике
The journal of the Russian society for non-destructive testing and technical diagnostic
 
| Русский Русский | English English |
 
Главная Archive
22 | 09 | 2026
2016, 03 March

DOI: 10.14489/td.2016.03.pp.062-070 

Beljaeva E.A., Muravev V.V.
THE EFFECT OF THE ANODE POROSITY AND ANODIZING METHODS MODIFICATION ON THE WET TANTALUM CAPACITORS QUALITY
(pp. 62-70)

Abstract. This paper reviews the investigation of the anode porosity and anodizing methods impact on the hermetical wet tantalum capacitor quality by means of the experimental methods. The relation of the wet tantalum capacitor quality to the anode porosity and anodizing methods, the defects in given modes and the rejection methods of unreliable capacitors are analyzed. It is noted that a leakage current values of capacitors with the anodes produced by current technology are lower. The process of Burn In of these capacitors reveals that production of the anodes with less current pressing density is not effective.

Keywords: wet tantalum capacitor, anodizing, anode porosity, quality, reliability, defect.

 

E. A. Beljaeva, V. V. Muravev
Kalashnikov Izhevsk State Technical University, Izhevsk, Russia. E-mail: Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра.  

 

1. Beliaeva E. A., Murav'ev V. V. (2015). Manage the production of tantalum capacitors with liquid electrolyte by controlling the operational outlet of suitable products. Vestnik IzhGTU im. M. T. Kalashnikova, (2), pp. 72-75.
2. Tripp T. (2003). Effect of heat treatment on the dielectric properties of anodic oxide films of tantalum and niobium. A. Oxygen migration. Doklady CARTS, p. 21.
3. Ramprasad R. (2003). Phenomenological theory to model leakage currents in metal–insulator–metal capacitor systems. Phys. Stat. Sol., (b), 239(1), pp. 59-70. doi: 10.1002/pssb.200303239
4. Pozdeev-Friman Iu. (2003). Effect of heat treatment on the dielectric properties of anodic oxide films of tantalum and niobium. В. Crystallization. Doklady CARTS, p. 29.
5. Kuznetsova V. A., Kuznetsov P. L., Beliaeva E. A., Murav'ev V. V. (2013). Studying the effect on the performance of the materials quality of tantalum oxide-semiconductor chip capacitors. Intellektual'nye sistemy v proizvodstve, (2), pp. 140-143.

 

 

This article  is available in electronic format (PDF).

DOI: 10.14489/td.2016.03.pp.062-070

Copy the article DOI and follow the link https://id-spektr.ru/product/pokupka-elektronnoy-stati-iz-zhurnala-kontrol-diagnostika

Please specify the article DOI in the order comments.

 

 

 
Search