10.14489/td.2026.07.pp.010-017

2026, 07 July

DOI: 10.14489/td.2026.07.pp.010-017

Suraykin A. I., Bespalov N. N., Kudriashov A. D.
METHOD OF NON-DESTRUCTIVE TESTING OF THERMAL RESISTANCE OF LOW-POWER SEMICONDUCTOR DEVICES BASED ON A SEMI-EMPIRICAL MATRIX MODEL
(pp. 10-17)

Abstract. The article presents an investigation of the thermal resistance of semiconductor devices using an advanced analytical approach. The analysis demonstrates how the interplay between the temperature coefficient of the forward voltage drop across the p–n junction and the crystal temperature influences the device’s thermal resistance. A semi-empirical model is introduced to enable systematic analysis of thermal processes in semiconductor structures and facilitate the calculation of their thermal resistance. The proposed approach provides characteristics that allow reliable estimation of the thermal resistance of low-power semiconductor devices with practical accuracy.

Keywords: thermal resistance, temperature coefficient of the forward voltage drop across the p-n junction, thermal process, model.

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A. I. Suraykin, N. N. Bespalov, A. D. Kudriashov (National Research Ogarev Mordovia State University, Saransk, Russia) E-mail: Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. , Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. , Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра.

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DOI: 10.14489/td.2026.07.pp.010-017

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