Журнал Российского общества по неразрушающему контролю и технической диагностике
The journal of the Russian society for non-destructive testing and technical diagnostic
 
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07 | 12 | 2021
2021, 09 September

DOI: 10.14489/td.2021.09.pp.042-047

Spiridonov S. V., Faizullin R. R., Shashkov V. I.
INVESTIGATION OF TECHNOLOGICAL PROCESSES FOR CREATING LOW-DIMENSIONAL CONDUCTORS BASED ON PROBE LITHOGRAPHY
(pp. 42-47)

Abstract. Probe methods can not be considered a technology suitable for large-scale production of nanostructures due to low productivity and the difficulty of constructing three-dimensional structures. It is important, however, that they demonstrate the possibility of constructing complex nanostructures in the laboratory for research purposes. Experiments of this kind make it possible to study the physics of low-dimensional structures and to investigate the possibilities of their practical use in electronic devices. In this paper, we have investigated the technology of creating gold low-dimensional conductors on a dielectric substrate by methods of probe lithography. A literature analysis was conducted, during which was proposed a method for creating conductors based on the method of electric mass transfer. The contact pad of the 142EN1B microcircuit was used as a sample. To form a substrate with the required thickness of the gold film, the technology of chemical thinning (etching) of the surface of the finished sample was applied. A mixture of hydrochloric HCl and nitric acids HNO3 was chosen as a solution for etching gold. Within the framework of this work, the technique of preparing the substrate was developed, the parameters of STM lithography were investigated, and gold conductors were formed on the substrate. On the basis of the developed technology, nanoscale structures were obtained. Microscopic analysis showed that the minimum cross-section of the obtained gold conductors was 15…20 nm, the length was more than 50 nm.

Keywords: probe microscopy, lithography, nanostructures, conductors.

S. V. Spiridonov, R. R. Faizullin, V. I. Shashkov (Kazan National Research Technical University named after A. N. Tupolev-KAI, Kazan, Russia) E-mail: Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. , Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. , Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра.  

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